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13.11.2011 The prediction

The prediction has come true Morkovina - in advert

09.11.2011 of Tartar came the

of Tartar came the

09.11.2011 in the state of their

like mushrooms after a rain, or, as Tatarsky wrote in one concept, the coffins after the leader.


Nanoelectronics - sphere of microelectronics, covering the problem of creating integrated circuits with topological norm of less than 100 nm.  

Nanoelectronics preceded microelectronics, which traces its history back to 1958, when Jack Kilby (firm Texas Instruments) and Robert Noyce (firm Fairchild) created the first integrated circuit, containing four transistors and two resistors.

The subsequent development of microelectronics, and then nanoelectronics, followed the path of increasing the number of transistors, which reach in modern microprocessors one and a half billion, and, accordingly, reducing the topological norms. Modern integrated electronic devices manufactured by 22 nm design norms, and Intel has come close to producing computer chips to 14-nanometer technology, based on 300-millimeter silicon wafers.

Development of nanoelectronics currently is a complex process aimed at the creation of new materials, development of new principles of pattern formation with topological norms of less than 100 nm, the improvement of the theoretical understanding of the mechanisms of charge transport in nanostructures. Further development of nanoelectronics is impossible without the development of new base technologies of formation of the critical elements of semiconductor devices and memory elements. The development of such technologies, in turn, implies a fundamental and applied researches in the field:

  • physical bases of transistors with nanometer dimensions, especially quantum transistors;  
  • new materials with specific electrical and magnetic properties;  
  • physical bases of the technological processes of nanoelectronics;  
  • theoretical models of the critical elements of integrated semiconductor devices based on new
  • materials integrated electronics;  
  • new materials with specific electrical and magnetic properties;  
  • methods of formation of nanostructures from these materials and methods consideration of
  • the effect of surfaces and interfaces on the properties of nanostructures methods;  
  • actually nanotransistors and technologies for their manufacture;  
  • integrated circuits with nanoscale topological norms.  

Currently, the amount of information about future developments and technologies in the field of nanoelectronics in the Russian Federation and abroad is so great that there is a need for its structured, complex analysis and presentation in the form of an ontology of scientific, technical and technological knowledge in the field of nanoelectronics. For this purpose, and was developed knowledge base of subject areas of the national nanotechnology network "Nanoelectronics". To provide access to resources in the semantic domain and solve scientific, engineering, production and educational challenges in the field of nanoelectronics an information portal "Nanotechnology integrated electronics" was created. Currently, the knowledge base contains over 300 production rules, the number of which will be updated as the number of requests, feedback and suggestions from users.